Novel through silicon contact structure and method of forming the same

ABSTRACT

In a TSC structure, a first dielectric layer is formed over a first main surface of a substrate. The substrate includes an opposing second main surface. A TSC is formed in the first dielectric layer and the substrate so that the TSC passes through the first dielectric layer and extends into the substrate. A conductive plate is formed over the first dielectric layer and electrically coupled with the TSC. An isolation trench is formed in the substrate to surround the conductive plate and spaced apart from the conductive plate. A second dielectric layer is formed on the second main surface of the substrate. A first plurality of vias are formed in the second dielectric layer that extend into the substrate and are connected to the TSC. A second plurality of vias are formed in the second dielectric layer that extend into the substrate and are not connected to the TSC.

RELATED APPLICATION

This application is a continuation of International Application No.PCT/CN2019/075400, filed on Feb. 18, 2019. The entire disclosure of theprior application is hereby incorporated by reference in its entirety.

BACKGROUND

A through silicon contact (TSC) is widely used in semiconductorindustry. The TSC is a vertical electrical connection passing completelythrough a silicon wafer or a die. TSC technology is important increating 3D packages and 3D integrated circuits. The TSC providesinterconnection of vertically aligned electronic devices throughinternal wiring that significantly reduces complexity and overalldimensions of a multi-chip electronic circuit. Compared to traditionalpackaging technologies, the TSC technology provides higher interconnectand device density, shorter length of the connection.

A related TSC structure includes a TSC opening passing through asubstrate, a barrier layer formed along sidewalls of the TSC opening,and a conductive material filled in the TSC opening. As the criticaldimensions of semiconductor devices in integrated circuits shrink toachieve higher device density and faster operation speed, an RC delayintroduced by the related TSC structure becomes a major concern.

SUMMARY

The inventive concepts relate to a novel TSC structure with a pluralityof through silicon contacts (TSCs) passing through a substrate. The TSCstructure introduces one or more vias that are electrically coupled withthe plurality of TSCs and the substrate to reduce/eliminate the electricpotential difference between the TSCs and the substrate. Thereduced/eliminated electric potential difference in turn reduces oreliminates parasitic capacitance formed between the TSCs and thesubstrate. In addition, an isolation trench is introduced into the TSCstructure that separates the TSC structure from adjacent electroniccomponents to prevent the electrical interference between the TSCstructure and the adjacent electronic components.

Through silicon contact (TSC) technology is widely used in semiconductormemory industry. For example, as 3D NAND technology migrates towardshigh density and high capacity, especially from 64 L to 128 Larchitecture, the number of devices, the number of metal lines hasincreased significantly, especially the periphery circuits. Theincreased periphery circuits require a larger chip area that lowers NANDbit density. One of the solutions is to produce an array circuit waferthat includes memory cells and a periphery circuit wafer that includescontrol circuits respectively. A through silicon contact (TSC) structurecan be subsequently introduced to electrically connect the array circuitwafer and the periphery circuit wafer. However, related TSC structure isfound to have RC delay issue due to the parasitic capacitance of TSCstructure. Therefore, a new TSC structure is needed to meet the advancedtechnology requirements.

In the disclosure, a novel TSC structure is introduced. According to anaspect of the disclosure, an integrated circuit chip is provided. Theintegrated chip includes a substrate that has opposing first and secondmain surfaces, a plurality of transistors that are formed at a firstlocation of the substrate in the second main surface, and a bond padstructure that is formed at a second location of the substrate. The bondpad structure include a first dielectric layer that is formed over thefirst main surface of the substrate, a through silicon contact (TSC)that is formed in the first dielectric layer and the substrate so thatthe TSC extends through the first dielectric layer and extends into thesubstrate. The bond pad structure further includes a conductive platethat is formed over the first dielectric layer and electrically coupledwith the TSC. The bond pad structure has an isolation trench that isformed in the first dielectric layer and the substrate. The isolationtrench concentrically surrounds the conductive plate and extends throughthe first dielectric layer and the first and second main surfaces of thesubstrate. The isolation trench and the conductive plate are spacedapart from each other by the first dielectric layer. The bond padstructure further has a second dielectric layer formed on the secondmain surface of the substrate. A first via is formed in the seconddielectric layer that extends through the second main layer into thesubstrate and is connected to the TSC. A second via formed in the seconddielectric layer that extends through the second main layer into thesubstrate and is not connected to the TSC.

In some embodiments, the bond pad structure further includes a metalline that is formed over the second dielectric layer, and the metal lineis connected to the first via and the second via.

In some embodiments, the TSC further includes a contact region that isformed in the first dielectric layer and the substrate. The contactregion has side portions and a bottom portion to expose the first via. Abarrier layer is formed along the side portions of the contact region,and a conductive layer is formed along the barrier layer. The conductivelayer is disposed in the contact region and connected with the firstvia.

In some embodiments, the through silicon contact (TSC) is formed in thefirst dielectric layer and the substrate so that the TSC extends throughthe first dielectric layer and the first and second main surfaces of thesubstrate.

According to another aspect of the disclosure, a method formanufacturing the bond pad structure is provided. In the disclosedmethod, a top dielectric layer is formed over a top surface of asubstrate. The substrate has opposing first and second main surfaces,and a plurality of vias are formed in the top dielectric layer andextend into the substrate. The plurality of vias are electricallycoupled to one another. A bottom dielectric layer is formed on a bottomsurface of the substrate. An isolation opening and a plurality ofcontact openings are subsequently formed in the bottom dielectric layerand the substrate. The isolation opening passes through the bottomdielectric layer and extends from the bottom surface to the top surfaceof the substrate. Each of the plurality of contact openings has sideportions and a bottom portion to expose a respective via that is formedin the top dielectric layer. The isolation opening is then filled withan insulating layer to form an isolation trench. The plurality ofcontact openings is further filled with a conductive layer to form aplurality of through silicon contacts (TSCs). The conductive layer is indirect contact with the respective via that is exposed by the each ofthe plurality of contact openings. A conductive plate is formed over thebottom dielectric layer. The conductive plate is in direct contact withthe plurality of through silicon contacts. The conductive plate isfurther concentrically surrounded by the isolation trench and spacedapart from the isolation trench by the bottom dielectric layer.

In some embodiments, in the disclosed method, forming the bottomdielectric layer on the bottom surface of the substrate further includesremoving a bottom portion of the substrate from the bottom surface andforming the bottom dielectric layer on the bottom surface of thesubstrate.

According to yet another aspect of the disclosure, a semiconductordevice is provided. The semiconductor device includes a substrate thathas opposing top and bottom surfaces. A memory cell region is formed inthe top surface of the substrate, and a through silicon contact (TSC)structure is formed adjacent to the memory cell region. The TSCstructure includes a bottom dielectric layer that is formed over thebottom surface of the substrate, a through silicon contact (TSC) that isformed within the bottom dielectric layer and the substrate. The TSCpasses through the bottom dielectric layer and extends into thesubstrate. The TSC structure also includes a bond plate that is formedover the bottom dielectric layer, and the bond plate is electricallyconnected with the TSC. The TSC structure further includes an isolationtrench formed in the bottom dielectric layer and the substrate. Theisolation trench concentrically surrounds the bond plate, passes throughthe bottom dielectric layer, and extends from the top surface to thebottom surface of the substrate. The isolation trench and the bond plateare separated by the bottom dielectric layer. In the TSC structure, atop dielectric layer is formed on the top surface of the substrate, afirst via is formed in the top dielectric layer that extends through thetop surface into the substrate and is connected to the TSC, and a secondvia is formed in the top dielectric layer. The second via extendsthrough the top surface into the substrate and is not connected with theTSC.

In some embodiments, the memory cell region can include a plurality ofDRAM memory cells, a plurality of NAND memory cells, a plurality ofthree dimensional NAND memory cells, a plurality of phase change memorycells, or a plurality of magnetoresistive random-access memory (MRAM)cells.

According to the disclosure, a novel through silicon contact (TSC)structure is provided. The TSC structure includes a bottom dielectriclayer formed over a bottom surface of a substrate, a top dielectriclayer formed over a top surface of the substrate, a plurality of throughsilicon contacts (TSCs) passing through the bottom dielectric layer andextending into the substrate, and a plurality of vias that are formed inthe top dielectric layer and extend through the top surface into thesubstrate. The TSCs are electrically connected to a conductive pad, andthe vias are electrically connected to a metal line and electricallycoupled with one another. In the disclosed TSC structure, a firstplurality of the vias is connected to the TSCs and a second plurality ofthe vias is electrically coupled with the substrate and not connected toany of the TSCs. Therefore, the disclosed TSC structure hereinintroduces one or more vias (e.g., the second plurality of the vias)that are electrically coupled with the plurality of TSCs and thesubstrate to reduce/eliminate the electric potential difference betweenthe TSCs and the substrate. The reduced/eliminated electric potentialdifference in turn reduces or eliminates parasitic capacitance formedbetween the TSCs and the substrate. In addition, an isolation trench isintroduced into the TSC structure that separates the TSC structure fromadjacent electronic components to prevent the electrical interferencebetween the TSC structure and the adjacent electronic components.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a cross-sectional view of a through silicon contact (TSC)structure, in accordance with exemplary embodiments of the disclosure.

FIG. 1B is a top down view of the TSC structure, in accordance withexemplary embodiments of the disclosure.

FIG. 2 is a cross-sectional view of a related through silicon contact(TSC) structure, in accordance with exemplary embodiments of thedisclosure.

FIGS. 3 through 10B are cross-sectional and top down views of variousintermediary steps of manufacturing a TSC structure, in accordance withexemplary embodiments of the disclosure.

FIG. 11A is a cross-sectional view of an alternative TSC structure, inaccordance with exemplary embodiments of the disclosure.

FIG. 11B is a top down view of the alternative TSC structure, inaccordance with exemplary embodiments of the disclosure.

FIG. 12 is an integrated circuit chip, in accordance with exemplaryembodiments of the disclosure.

FIG. 13 is a flowchart of a process for manufacturing a TSC structure,in accordance with exemplary embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed features may be in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may not bein direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1A is a cross-sectional view of a through silicon contact (TSC)structure 100, and FIG. 1B is a top down view of the TSC structure 100where the cross-sectional view of the TSC structure 100 in FIG. 1A isobtained from a plane same as the vertical plane containing line A-A′ inFIG. 1B. Dashed lines in FIG. 1B indicate a perspective view.

The TSC structure 100 can have a substrate 102. The substrate 102 has abottom surface (or first main surface) 102 b and a top surface (orsecond main surface) 102 a. The TSC structure 100 can have a bottomdielectric layer 108 formed on the bottom surface 102 b. In anembodiment, the bottom dielectric layer 108 can be made of SiO, SiN,SiC, SiON, SiOC, SiCN, SiOCN, AlO, AlON, ZrO, or high K material. Thebottom dielectric layer 108 can have a thickness in a range from 1 um to2 um.

A plurality of through silicon contacts 126 (TSCs) are formed in thebottom dielectric layer 108 and the substrate 102. For example, fourTSCs 126A-126D are included in FIGS. 1A/1B. However, four TSCs are shownas an example, and the invention is not limited to this number. The TSCs126 pass through the bottom dielectric layer 108 and extend through thebottom surface 102 b into the substrate 102. In some embodiments, theTSCs 126 pass through the bottom dielectric layer 108 and extend fromthe bottom surface 102 b to the top surface 102 a of the substrate 102.

The TSCs can have a circular pillar-shape with a critical dimension (CD)in a range from 300 nm to 400 nm and a height in a range from 3 um to 4um. The disclosure is not limited thereto, and the TSC may be formed ina square pillar-shape, an oval pillar-shape, or other suitable shapes,depending on the design requirements.

Each of the TSCs has side portions and a bottom portion. A barrier layeris formed along the side portions of the TSC, and a conductive layer isformed along the barrier layer and surrounded by the barrier layer. Forexample, a TSC 126A has a barrier layer 110 a formed along the sideportion, and a conductive layer 112 a that is formed along the barrierlayer 110 a and surrounded by the barrier layer 110 a. The barrierlayers 110 a-110 d can have a thickness in a range from 100 nm to 200nm, and include Tetraethyl Orthosilicate (TEOS), SiO, SiN, SiC, SiON,SiOC, SiCN, SiOCN, or other suitable materials. The conductive layers112 a-112 d can include copper, tungsten, cobalt, ruthenium, or othersuitable conductive materials.

The TSC structure 100 further has a top dielectric layer 114 formed onthe top surface 102 a. A plurality of vias 118 are formed in the topdielectric layer 114. For example, eight vias 118 a-118 h are includedin FIGS. 1A/1B. In the disclosed TSC structure 100, a first plurality ofthe vias 118 is connected with the TSCs 126, and a second plurality ofthe vias 118 extends into the substrate 102 from the top surface 102 ato be electrically coupled with the substrate. For example, as shown inFIGS. 1A/1B, a bottom portion of the TSC 126A is in direct contact witha via 118 b where the conductive layer 112 a of the TSC 126A iselectrically connected with the via 118 b. Similarly, a TSC 126B is indirect contact with a via 118 c, a TSC 126C is in direct contact with avia 118 f (not shown), and a TSC 126D is in direct contact with a via118 g (not shown). It should be noted that the vias 118 and the TSCs 126can have various diameters according to technology requirements. Stillreferring to FIGS. 1A/1B, four vias 118 a, 118 d, 118 e, and 118 h arenot connected with any one of the TSCs 126 and are in direct contactwith the substrate 102. The four vias 118 a, 118 d, 118 e, and 118 hfurther extend into the substrate with a depth from 10 nm to 20 nm andare electrically coupled with the substrate 102. In some embodiments,the vias (e.g., 118 b, 118 c, 118 f and 118 g) that are in directcontact with the TSCs 126 can have a same diameter as the vias (e.g.,118 a, 118 d, 118 e, and 118 h) that are in direct contact with thesubstrate. In some embodiments, the vias that are in direct contact withthe TSCs 126 can have a different diameter from the vias that are indirect contact with the substrate.

The top dielectric layer 114 can have a thickness in a range from 5 umto 6 um, and can be made of SiO, SiN, SiC, SiON, SiOC, SiCN, SiOCN, AlO,AlON, ZrO, or high K material. The vias 118 can have a bottom CD thatexposes the top surface 102 a in a range from 120 nm to 160 nm, a top CDin a range from 250 nm to 300 nm, and a height between 4.5 um and 5 um.The vias 118 can include copper, tungsten, cobalt, ruthenium, or othersuitable conductive materials.

In the TSC structure 100, a conductive plate 106 is formed over thebottom dielectric layer 108. The conductive plate 106 can have arectangle profile, a square profile, or other geometric profile. Theconductive plate 106 is connected with the TSCs 126 and functions as abond pad during a packaging process. The conductive plate 106 can bemade of aluminum or copper with a thickness in a range from 600 nm to700 nm, and a minimum width of 600 nm. The TSC structure 100 alsoincludes a metal line 116 that is connected with the vias 118. In someembodiments, the metal line 116 can be connected with four vias 118a-118 d. In some embodiments, the metal line 116 can be connected withall eight vias 118 a-118 h as shown in FIGS. 1A/1B, depending on thecircuit requirements. The metal line 116 can be made of copper,tungsten, or aluminum with a CD in a range from 200 nm to 300 nm, and athickness in a range from 400 Å to 600 Å.

Still referring to FIGS. 1A/1B, an isolation trench 104 is formed in thebottom dielectric layer 108 and the substrate 102. The isolation trench104 passes through the bottom dielectric layer 108 and the substrate102. The isolation trench 104 further lands on the top dielectric layer114. The isolation trench 104 is closed-shaped (such as ring-shaped) andconcentrically surrounds the conductive plate 106. In other embodiments,the isolation trench 104 can be open-shaped (such as a ring with gaps).The conductive plate 106 and the isolation trench 104 are spaced apartby the bottom dielectric layer 108. The isolation trench 104 can have atop CD D1 in a range from 160 nm to 210 nm, a bottom CD D2 between 140nm and 180 nm, and a height T1 between 3 um and 4 um.

The substrate 102 may include a silicon (Si) substrate, a germanium (Ge)substrate, a silicon germanium (SiGe) substrate, and/or asilicon-on-insulator (SOI) substrate. The substrate 102 may include asemiconductor material, for example, a Group IV semiconductor, a GroupIII-V compound semiconductor, or a Group II-VI oxide semiconductor. Inan embodiment of FIG. 1, the substrate 102 is a Group IV semiconductorthat may include Si, Ge, or SiGe. The substrate 102 may be a bulk waferor an epitaxial layer.

FIG. 2 is a cross-sectional view of a related through silicon contact(TSC) structure 200. The TSC structure 200 has a plurality of throughsilicon contacts (TSCs) 226, a conductive plate 206 that are connectedwith the TSCs 226, a plurality of vias 218 that are connected with theTSCs 226, and a metal line 216 that are connected with the vias 218. Itshould be noted that the vias 218 and the TSCs 226 can have variousdiameters according to technology requirements. Each of the TSCs 226 canhave a barrier layer 210 and a conductive layer 212. Comparing to theTSC structure 100 as shown in FIG. 1, the TSC structure 200 does notinclude the isolation trench, and no additional vias are formed to beelectrically coupled with a substrate 202. During the operation of theTSC structure 200, the substrate 202 and the conductive plate 206/TSCs226 can have an electric potential difference. Parasitic capacitance canbe formed between the substrate 202 and the conductive plate 206/TSCs226 due to the electric potential difference. The formed parasiticcapacitance in turns causes RC delay in operating an integrated circuitthat is electrically coupled with the TSC structure 200.

On the contrary, in the TSC structure 100 as shown in FIGS. 1A/1B, thesecond plurality of vias (e.g., 118 a, 118 d, 118 e, and 118 h) is notconnected with any of the TSCs 126 and is in direct contact with thesubstrate 102. The second plurality of vias further is electricallycoupled with the TSCs 126 through the metal line 116 and the firstplurality of vias (e.g., 118 b, 118 c, 118 f, and 118 g) that areconnected with the TSCs 126. The substrate 102 and the TSCs 126 aretherefore electrically coupled through the second plurality of vias 118.The electric potential difference between the substrate 102 and the TSCs126 are accordingly reduced or eliminated, and the parasitic capacitancecorrespondingly becomes negligible. In addition, the isolation trench104 further separates the TSC structure 100 from adjacent electroniccomponents, such as memory cells, to prevent electrical interference.

FIGS. 3 through 10B illustrate the intermediate stages in the formationof a capacitor structure 100, where letter “A” indicates across-sectional view and “B” indicates a top down view. Thecross-sectional view is obtained from a plane same as the vertical planecontaining line A-A′ in the top down view.

As shown in FIG. 3, a substrate 102 is prepared. The substrate has a topsurface 102 a and a bottom surface 102 b. A top dielectric layer 114 isformed on the top surface 102 a of the substrate 102. The top dielectriclayer 114 can have a thickness in a range from 5 um to 6 um, and can bemade of SiO, SiN, SiC, SiON, SiOC, SiCN, SiOCN, AlO, AlON, ZrO, or highK material. Any suitable deposition process can be applied to form thetop dielectric layer 114, such as chemical vapor deposition (CVD),physical vapor deposition (PVD), atomic layer deposition (ALD),diffusion, or any combination thereof.

Still referring to FIG. 3, a plurality of vias 118 are formed in the topdielectric layer 114. The vias 118 further extend into the substrate 102with a depth between 10 nm and 20 nm. The vias 118 can be formed througha combination of a photolithographic process and an etching process. Forexample, a patterned mask stack can be formed over the top surface 114 aof the top dielectric layer 114. A subsequent etching processing isintroduced to etch through the top dielectric layer 114 to form aplurality of via openings. The via openings then can be filled with aconductive material, such as copper, tungsten, or aluminum. Varioustechniques can be applied to fill the via openings, such as PVD, CVD,ALD, or electro-chemical plating. In some embodiments, a blocking layer(not shown in FIG. 3), such as Ti, TiN, Ta, TaN, or other suitablematerials, is formed before the conductive material. The blocking layercan be formed by applying a PVD deposition, a CVD deposition, an ALDdeposition, or other well-known deposition techniques. The conductivematerial may also cover the top surface 114 a of the top dielectriclayer 114. A surface planarization process can be performed to removethe excessive conductive material over the top surface 114 a of the topdielectric layer 114, and the remaining conductive material in the viaopenings forms the vias 118.

Over the top surface 114 a of the top dielectric layer 114, a metal line116 can be formed. The metal line 116 is connected with the vias 118.The metal line 116 can be made of copper, tungsten, or aluminum with aCD in a range from 200 nm to 300 nm, and a thickness in a range from 400Å to 600 Å. The metal line 116 can be deposited by a suitable depositionprocess, such as chemical vapor deposition (CVD), physical vapordeposition (PVD), atomic layer deposition (ALD), sputtering, e-beamevaporation, or any combination thereof. Alternatively, the metal line116 can be formed through a damascene technique and an electro-chemicalplating (ECP) process may be applied.

In FIG. 4, a thinning process is introduced to remove a bottom portionof the substrate 102 from the bottom surface 102 b. Prior to thethinning process, a flipping process can be introduced where thesubstrate 102 is flipped upside down and the bottom surface 102 b isexposed for the subsequent thinning process. Any suitable process can beapplied to thin down the substrate 102, such as chemical mechanicalpolishing (CMP), etching back, or any combination thereof. After thethinning process, the substrate 102 can have a thickness in a range from2 um to 3 um.

In FIG. 5, a bottom dielectric layer 108 is formed on the bottom surface102 b of the substrate. The bottom dielectric layer 108 can be made ofSiO, SiN, SiC, SiON, SiOC, SiCN, SiOCN, AlO, AlON, ZrO, or high Kmaterial. The bottom dielectric layer 108 can have a thickness in arange from 1 um to 2 um. The bottom dielectric layer 108 can bedeposited by a suitable deposition process, such as chemical vapordeposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), sputtering, e-beam evaporation, or any combinationthereof.

In FIGS. 6A/6B, a trench opening 122 and a plurality of through siliconcontact (TSC) openings 120 a-120 d are formed. In order to form thetrench opening 122 and the TSC openings 120, a patterned mask stack (notshown) can be formed on the bottom dielectric layer 108. The mask stackcan include one or more hard mask layers and a photoresist layer. Themask stack can be patterned according to any suitable technique, such asa lithography process (e.g., photolithography or e-beam lithography)which may further include photoresist coating (e.g., spin-on coating),soft baking, mask aligning, exposure, post-exposure baking, photoresistdeveloping, rinsing, drying (e.g., spin-drying and/or hard baking), andthe like.

When the patterned mask stack is formed, an etching process, such as awet etching or a dry etching, can be applied. The etching process etchesthrough the bottom dielectric layer 108 and the substrate 102. Theetching process transfers the patterns of the mask stack into the bottomdielectric layer 108 and the substrate 102. Portions of the bottomdielectric layer 108 and the substrate 102 that are exposed by thepatterned mask stack are removed to form the trench opening 122 and theTSC openings 120. The trench opening 122 exposes the top dielectriclayer 114. The trench opening 122 can have a top CD D1 in a range from160 nm to 210 nm, a bottom CD D2 between 140 nm and 180 nm, and a heightT1 from 3 um to 4 um. The trench opening 122 are ring-shaped andconcentrically surrounds the TSC openings 120. The TSC openings 120 canhave a circular pillar-shape with a CD in a range from 300 nm to 400 nmand a height in a range from 3 um to 4 um. Each of the TSC openings 120has side portions and a bottom portion that exposes a respective via118. For example, a TSC opening 120 a can expose the via 118 b, as shownin FIG. 6B. In some embodiments, the etching process can remove aportion of the vias 118 that extends into the substrate 102, and the TSCopenings can therefore extend from the bottom surface 102 b to the topsurface 102 a of the substrate.

In FIG. 7, an insulating material 124 is formed to fill the trenchopening 122 and the TSC openings 120. According to a microloadingeffect, a deposition rate can be higher in a feature with a low aspectratio than in a feature with a high aspect ratio, where the aspect ratiois a ratio of a height to a width of the feature. Since the trenchopening 122 has a smaller aspect ratio than the TSC openings 120, theinsulating material 124 can have a higher deposition rate in theisolation trench 122. By precisely controlling the deposition time, theinsulating material 124 can fully fill the trench opening 122. In themeanwhile, the insulating material 124 can form a conformal thin barrierlayer along the side portions of the TSC openings. The insulatingmaterial 124 can further cover the exposed vias 118 at the bottomportions of the TSC openings 120 and further cover a top surface of thebottom dielectric layer 108. In another embodiment, the trench opening122 can be filled with a first insulating material in a firstdeposition, and the TSC openings 120 can have a second insulatingmaterial to cover the side portions and the bottom portions in a seconddeposition. The insulating material 124 can include SiO, SiN, SiC, SiON,SiOC, SiCN, SiOCN, or Tetraethyl Orthosilicate (TEOS). In an embodimentof FIG. 7, the insulating layer 124 is TEOS.

In FIG. 8, a removing process, such as an etching process, can beperformed to remove the insulating layer at the bottom portions of theTSC openings 120 to expose the vias 118. In one example, the etchingprocess may include blanket dry etching (e.g., blanket RIE or ICPetching). Blanket etching herein can mean an etching process without anyprotective mask. When the blanket etching is completed, the insulatingmaterial 124 formed at the bottom portions of the TSC openings 120, andthe insulating material 124 formed over the bottom dielectric layer 108can be removed. In addition, a top portion of the insulating material124 in the trench opening 122 can also be removed. As shown in FIG. 8,after the removing process, the insulating material 124 that remains inthe trench opening 122 forms the isolation trench 104. The insulatingmaterial 124 that remains along the side portions of the TSC openings120 forms the barrier layers 110 in the TSC openings 120.

In some embodiments, as desired a mask could be applied to expose thebottom portions of the TSC openings 120 only. A dry etching can beapplied afterwards. During the dry etching, a directional plasma oranisotropic plasma can be generated to remove the insulating layer 124at the bottom portions of the TSC openings 120 to expose the vias 118. Asubsequent surface planarization process can be performed to removeexcessive insulating material 124 over the top surface of the bottomdielectric layer 108, such as an etching process or a CMP process.

FIG. 9 illustrates the formation of the conductive layers 112 in the TSCopenings 120. In an embodiment, the conductive layers 112 may includecopper (Cu), copper magnesium (CuMn), copper aluminum (CuAl), and thelike, and an electro-chemical plating (ECP) process may be applied. Insome examples, a blocking layer (not shown in FIG. 9), such as Ti, TiN,Ta, TaN, or other suitable materials, is formed before the conductivelayers 112. The barrier layer can be formed by using physical vapordeposition (PVD), CVD, ALD, or other well-known deposition techniques.In another embodiment, the conductive layers 112 may include cobalt(Co), tungsten (W), ruthenium (Ru), aluminum (Al), copper (Cu), or othersuitable conductors, and be deposited by a suitable deposition process,such as chemical vapor deposition (CVD), physical vapor deposition(PVD), atomic layer deposition (ALD), sputtering, e-beam evaporation, orany combination thereof. In some embodiments, a subsequent surfaceplanarization process, such as an etching process or a CMP process, canbe applied to remove excessive conductive layers 112 over the topsurface of the bottom dielectric layer 108.

In FIGS. 10A/10B, a conductive plate 106 can be formed over the bottomdielectric layer 108. The conductive plate 106 can have a rectangleprofile, a square profile, or other geometric profile. The conductiveplate 106 can be made of aluminum or copper. The conductive plate 106 isconnected with the TSCs 126 and functions as a bond pad during apackaging process. In some embodiments, the conductive plate 106 can beformed through a combination of a deposition process and an etchingprocess. For example, a metal layer (e.g., Cu or Al) can be depositedover the bottom dielectric 108 through a CVD process, a PVD process, ora sputter process. A patterned mask can be subsequently formed over themetal layer, and an etching process can be applied to etch the metallayer. A portion of the metal layer that is protected by the patternedmask forms the conductive plate 106. In another embodiment, theconductive plate 106 can be formed through a combination of aphotolithographic process and a deposition process. For example, apatterned mask can be formed over the bottom dielectric layer 108, and ametal layer can be formed preferably on an exposed region by thephotolithographic process.

As shown in FIGS. 10A/10B, a complete TSC structure 100 is formed whenthe conductive plate 106 is introduced. The TSC structure 100illustrated in FIGS. 10A/10B is identical to the TSC structure 100illustrated in FIGS. 1A/1B.

FIGS. 11A/11B are cross-sectional and top down views of an alternativethrough silicon contact (TSC) structure 100′. Comparing to TSC structure100 illustrated in FIGS. 1 and 10, the isolation trench 104 formed inthe TSC structure 100′ has a different configuration. As shown in FIGS.11A/11B, the isolation trench 104 is disposed between the first andsecond dielectric layers, and extends from the top surface 102 a to thebottom surface 102 b of the substrate 102.

FIG. 12 illustrates an integrated circuit chip 200 in accordance with anembodiment of the disclosure. The integrated circuit chip 200 has a chipboundary 204 and a memory cell region 202. The memory cell region 202can include a plurality of memory cells, such as DRAM memory cells, NANDmemory cells, three dimensional (3D)-NAND memory cells, phase changememory cells, or magnetoresistive random-access memory (MRAM) cells. Theintegrated circuit chip 200 further includes one or more TSC structures100 that are adjacent to the memory cell region 202. The TSC structuresare identical to the TSC structure 100 illustrated in FIGS. 1 and 10.Each of the TSC structures 100 and the memory cell region 202 areseparated by the respective insulation trench 104 to prevent electricalinterference.

FIG. 13 is a flowchart of a process 300 for manufacturing a TSCstructure in accordance with exemplary embodiments of the disclosure.The process 300 begins at step 304 where a top dielectric layer isformed over a top surface of a substrate, and a plurality of vias areformed in the top dielectric layer. The vias further extend into thesubstrate with a depth between 10 nm and 20 nm. A metal line is furtherformed to connect the vias. In some embodiments, step 304 can beperformed as illustrated with reference to FIG. 3.

The process 300 then proceeds to step 306 where a bottom portion of thesubstrate is thinned down from a bottom surface and a bottom dielectriclayer is formed over the bottom surface. The bottom dielectric layer caninclude SiO, SiN, SiC, SiON, SiOC, SiCN, SiOCN, AlO, AlON, ZrO, or highK material. The bottom dielectric layer can have a thickness in a rangefrom 1 um to 2 um. In some embodiment, step 306 can be performed asillustrated with reference to FIGS. 4-5.

In step 308 of the process 300, a trench opening and a plurality of TSCopenings can be formed in the bottom dielectric layer and the substrate.The trench opening and the TSC openings can be formed through acombination of a photolithographic process and an etching process. Thetrench opening passes through the bottom dielectric and substrate toexpose the top dielectric layer. The trench opening is ring-shaped andconcentrically surrounds the TSC openings. The TSC openings can have acircular pillar-shape. Each of the TSC openings has side portions and abottom portion that exposes a respective via that is formed in the topdielectric. In some embodiments, the etching process can remove aportion of the via that extends into the substrate, and the TSC openingscan therefore extend from the bottom surface to the top surface of thesubstrate. In some embodiment, step 308 can be performed as illustratedwith reference to FIG. 6.

The process 300 then proceeds to step 310 where an insulating materialis formed to fill the trench opening to form an isolation trench. Theinsulation material can also form a conformal thin barrier layer alongside portions of the TSC openings. The insulating material further isformed at the bottom portions of the TSC openings and covers the exposedvias by the TSC openings. In some embodiment, step 310 can be performedas illustrated with reference to FIG. 7.

In step 312 of the process 300, a conductive layer is formed in each ofthe TSC openings. Prior to the formation of the conductive layer, anetching process is applied to remove the insulating material formed atthe bottom portions of the TSC openings to expose the vias. Theconductive layer may include copper (Cu), copper magnesium (CuMn),copper aluminum (CuAl), and the like, and an electro-chemical plating(ECP) process may be applied. In some examples, a blocking layer (notshown in FIG. 9), such as Ti, TiN, Ta, TaN, or other suitable materials,is formed before the conductive layers. A subsequent surfaceplanarization process, such as CMP, can be applied to remove excessiveconductive layer over the bottom dielectric layer. In some embodiment,step 312 can be performed as illustrated with reference to FIGS. 8-9.

The process 300 then proceeds to step 314 where a conductive plate isformed over the bottom dielectric layer. The conductive plate can have arectangle profile, a square profile, or other geometric profile. Theconductive plate can be made of aluminum or copper. The conductive plateis connected with the TSCs and functions as a bond pad during apackaging process. In some embodiments, the conductive plate can beformed through a combination of a deposition process and an etchingprocess. In some embodiment, step 314 can be performed as illustratedwith reference to FIGS. 10A/10B.

It should be noted that additional steps can be provided before, during,and after the process 300, and some of the steps described can bereplaced, eliminated, or performed in different order for additionalembodiments of the process 300. In subsequent process steps, variousadditional interconnect structures (e.g., metallization layers havingconductive lines and/or vias) may be formed over the semiconductordevice 100. Such interconnect structures electrically connect thesemiconductor device 100 with other contact structures and/or activedevices to form functional circuits. Additional device features such aspassivation layers, input/output structures, and the like may also beformed.

The various embodiments described herein offer several advantages overrelated examples. For example, in a related TSC structure, parasiticcapacitance can be formed between the substrate and the related TSCstructure due to the electric potential difference. The formed parasiticcapacitance in turns causes RC delay during the operation of theintegrated circuit chip that is electrically coupled with the relatedTSC structure. The disclosed TSC structure introduces one or more viasthat are electrically coupled with the plurality of through siliconcontacts (TSCs) and the substrate to reduce/eliminate the electricpotential difference between the TSCs and the substrate. Thereduced/eliminated electric potential difference in turn reduces oreliminates parasitic capacitance formed between the TSCs and thesubstrate. In addition, an isolation trench is introduced into thedisclosed TSC structure that separates the disclosed TSC structure fromadjacent electronic components to prevent the electrical interferencebetween the disclosed TSC structure and the adjacent electroniccomponents.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated structure comprising: a firstdielectric layer formed over a first main surface of the substrate, thesubstrate further including an opposing second main surface; a throughsilicon contact (TSC) formed in the first dielectric layer and thesubstrate so that the TSC extends through the first dielectric layer andextends into the substrate; a conductive plate formed over the firstdielectric layer, the conductive plate being electrically coupled withthe TSC; an isolation trench formed in the substrate that surrounds theconductive plate, the isolation trench and the conductive plate beingspaced apart from each other; a second dielectric layer formed on thesecond main surface of the substrate; a first plurality of vias formedin the second dielectric layer that extend through the second mainsurface into the substrate and are connected to the TSCs.
 2. Theintegrated structure of claim 1, further comprising: a metal line formedover the second dielectric layer, wherein the metal line is connected tothe first plurality of vias.
 3. The integrated structure of claim 2,further comprising: a second plurality of vias formed in the seconddielectric layer that extend through the second main surface into thesubstrate and are connected to the metal line, wherein the secondplurality of vias are not connected to the TSC.
 4. The integratedstructure of claim 1, wherein the isolation trench extends through thefirst and second main surfaces of the substrate.
 5. The integratedstructure of claim 1, wherein the isolation trench extends through thefirst dielectric layer and the first and second main surfaces of thesubstrate.
 6. The integrated structure of claim 1, wherein the TSCfurther comprises: a barrier layer, the barrier layer being in directcontact with the first dielectric layer and the substrate; and aconductive layer formed along the barrier layer and surrounded by thebarrier layer, the conductive layer being connected with the first via.7. The integrated structure of claim 1, wherein the through siliconcontact (TSC) formed in the first dielectric layer and the substrate sothat the TSC extends through the first dielectric layer and the firstand second main surfaces of the substrate.
 8. The integrated structureof claim 1, wherein the isolation trench and the first dielectric layerare co-planner.
 9. The integrated structure of claim 1, wherein theisolation trench comprises a tapered profile.
 10. The integratedstructure of claim 9, wherein the isolation trench has a first criticaldimension (CD) at the first main surface, and a second CD at the secondmain surface, the first CD being bigger than the second CD.
 11. Anintegrated circuit (IC) chip, comprising: a substrate having opposingtop and bottom surfaces; a memory cell region formed in the top surfaceof the substrate; and a through silicon contact (TSC) structure formedadjacent to the memory cell region, the through silicon contactstructure comprising: a bottom dielectric layer formed over the bottomsurface of the substrate; a through silicon contact (TSC) formed in thebottom dielectric layer and the substrate so that the TSC passes throughthe bottom dielectric layer and extends into the substrate; a conductiveplate formed over the bottom dielectric layer, the conductive platebeing electrically coupled with the TSC; an isolation trench formed inthe substrate that surrounds the conductive plate, the isolation trenchand the conductive plate being spaced apart from each other; a topdielectric layer formed on the top surface of the substrate; a firstplurality of vias formed in the top dielectric layer that extend throughthe top surface into the substrate and are connected to the TSC.
 12. TheIC chip of claim 11, further comprising: a second plurality of viasformed in the top dielectric layer that extend through the top surfaceinto the substrate, wherein the second plurality of vias are notconnected to the TSC.
 13. The IC chip of claim 11, wherein the isolationtrench extends through the top and bottom surfaces of the substrate. 14.The IC chip of claim 11, wherein the isolation trench extends throughthe bottom dielectric layer and the top and bottom surfaces of thesubstrate.
 15. A method, comprising: forming a top dielectric layer overa top surface of a substrate having a plurality of vias that are formedthrough the top dielectric layer that extend into the substrate, theplurality of vias being electrically coupled to one another; forming abottom dielectric layer on a bottom surface of the substrate; forming anisolation opening and a plurality of contact openings in the bottomdielectric layer and the substrate, the isolation opening passingthrough the bottom dielectric layer and extending from the bottomsurface to the top surface of the substrate, each of the plurality ofcontact openings having side portions and a bottom portion to expose arespective via that is formed in the top dielectric layer; filling theisolation opening with an insulating layer to form an isolation trench;filling the plurality of contact openings with a conductive layer toform a plurality of through silicon contacts (TSCs), the conductivelayer being in direct contact with the respective via that is exposed bythe each of the plurality of contact openings; and forming a conductiveplate over the bottom dielectric layer, the conductive plate being indirect contact with the plurality of through silicon contacts, theconductive plate being surrounded by the isolation trench and spacedapart from the isolation trench.
 16. The method of 15, wherein formingthe bottom dielectric layer over the bottom surface of the substratefurther comprises: removing a bottom portion of the substrate from thebottom surface; and forming the bottom dielectric layer over the bottomsurface of the substrate.
 17. The method of 15, wherein filling theplurality of contact openings with the conductive layer furthercomprises: forming a barrier layer along the side portions of the eachof the plurality of contact openings, the barrier layer further beingformed over the respective via that is exposed by the each of theplurality of contact openings; removing the barrier layer formed overthe respective via; depositing the conductive layer in the each of theplurality of contact openings, the conductive layer being formed alongthe barrier layer and in direct contact with the respective via that isexposed by the each of the plurality of contact openings, the conductivelayer further covering the bottom dielectric layer; and performing asecond surface planarization process to remove conductive layer over thebottom dielectric layer.
 18. The method of 15, wherein filling theplurality of contact openings with the conductive layer furthercomprises: filling the isolation opening and the plurality of contactopenings with the insulating layer, the insulating layer being formedalong the side portions of each of the plurality of contact openings,the insulating layer being formed over the respective via that isexposed by each of the plurality of contact openings, and the insulatinglayer further being formed over the bottom dielectric layer; removingthe insulating layer formed over the respective via that is exposed byeach of the plurality of contact openings, and removing the insulatinglayer formed over the bottom dielectric layer; depositing the conductivelayer in each of the plurality of contact openings, the conductive layerbeing formed along the insulating layer and in direct contact with therespective via that is exposed by each of the plurality of contactopenings, the conductive layer further covering the bottom dielectriclayer; and performing the second surface planarization process to removeconductive layer over the bottom dielectric layer.
 19. The method of 15,wherein at least one via of the plurality of vias formed in the topdielectric layer is electrically coupled with the substrate and is notexposed by the contact openings.
 20. The method of 15, wherein formingthe isolation opening comprises forming the isolation opening with aclosed-loop configuration that surrounds the plurality of contactopenings.